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“半导体分立器件“相关标准

发布时间:2007-03-24 09:12:13    浏览:2786

1 GB/T 249-1989 半导体分立器件型号命名方法

The rule of type designation for discrete semiconductor devices

2 GB/T 4024-1983 半导体器件反向阻断三极晶闸管的测试方法

Measuring methods for semiconductor device--Reverse blocking triode thyratron

3 GB/T 4586-1994 半导体器件 分立器件 第8部分: 场效应晶体管

Semiconductor devices--Discrete devices--Part 8: Field-effect transistors

4 GB/T 4587-1994 半导体分立器件和集成电路 第7部分: 双极型晶体管

Semiconductor discrete devices and integrated circuits--Part 7: Bipolar transistors

5 GB/T 4589.1-1989 半导体器件 分立器件和集成电路总规范 (可供认证用)

Semiconductor devices-Generic specification for discrete devices and  


integrated circuits

6 GB/T 4619-1996 液晶显示器件测试方法

Measuring methods for liquid crystal display devices

7 GB/T 4654-1984 碳化硅、锆英砂、陶瓷类红外辐射加热器通用技术条件

The general technical specifications on silicon carbide and zircon  


ceramic infrared heater

8 GB/T 4799-1984 气体激光器型号命名方法

The denominating method of type for gas lasers

9 GB/T 4931-1985 氦氖激光器系列型谱

The series and type spectrum for helium neon lasers

10 GB/T 4932-1985 二氧化碳激光器系列型谱

The series and type spectrum for carbon dioxide lasers

11 GB/T 4937-1995 半导体器件机械和气候试验方法

Mechanical and climatic test methods for semiconductor devices

12 GB/T 4938-1985 半导体分立器件接收和可靠性

Acceptance and reliability for discrete semiconductor devices

13 GB/T 4939-1985 普通整流管

Rectifier diodes for general purpose

14 GB/T 4940-1985 普通晶闸管

Triode thyristors for general purpose

15 GB/T 6218-1996 开关用双极型晶体管空白详细规范

Blank detail specification for bipolar transistors for switching applications

16 GB/T 6256-1986 工业加热三极管空白详细规范 (可供认证用)

Blank detail specification for industrial heating triodes

17 GB/T 6570-1986 微波二极管测试方法

Measuring methods for microwave diodes

18 GB/T 6571-1995 半导体器件 分立器件 第3部分:信号(包括开关)和调整二极管

Semiconductor devices--Discrete devices--Part 3: Signal(including switching)and regulator diodes

19 GB/T 6588-1986 通用信号和(或)开关半导体二极管空白详细规范 (可供认证用)

Blank detail specification for general purpose signal and/or switching


semiconductor diodes

 20 GB/T 6589-1986 电压调整和电压基准二极管 (包括温度补尝精密基准二极管)  


空白详细规范 (可供认证用)

Blank detail specification for volt age regulator diodes and voltage  


reference diodes, excluding temperature compensated precision reference


diodes


21 GB/T 7577-1996 低频放大管壳额定的双极型晶体管空白详细规范

Blank detail specification for case-rated bipolar transistors for


low-frequency amplification

22 GB/T 7581-1987 半导体分立器件外形尺寸

Dimensions of outlines for semiconductor discrete devices

23 GB/T 9436-1988 液晶显示器件参数符号

Letter symbols of parameter for liquid crystal display devices

24 GB/T 11153-1989 激光小功率计性能检测方法

Parameters testing method of laser power meter in low range

25 GB/T 12300-1990 功率晶体管安全工作区测试方法

Test methods of safe operating area for power transistors

26 GB/T 12560-1990 半导体器件 分立器件分规范 (可供认证用)

Semiconductor devices-Sectional specification for discrete devices

27 GB/T 12561-1990 发光二极管空白详细规范 (可供认证用)

Blank detail specification for light emitting diodes

28 GB/T 12562-1990 PIN 二极管空白详细规范 (可供认证用)

Blank detail specification for PIN diodes

29 GB/T 12848-1991 扭曲向列型液晶显示器件总规范 (可供认证用)

Generic specification of twisted nematic liquid crystal display devices

30 GB/T 12849-1991 钟、表用扭曲向列型液晶显示器件空白详细规范


(可供认证用)

Blank detail specification of twisted nematic liquid crystal


displays for watches

31 GB/T 12850-1991 计算器用扭曲向列型液晶显示器件空白详细规范


(可供认证用)

Blank detail specification of twisted nematic liquid crystal displays


for calculators

32 GB/T 12851-1991 仪器、仪表用扭曲向列型液晶显示器件空白详细规范


(可供认证用)

Blank detail specification of twisted nematic liquid crystal displays


for instruments

33 GB/T 13063-1991 电流调整和电流基准二极管空白详细规范

Blank detail specification for current-regulator and current-reference


diodes 34 GB/T 13066-1991 单结晶体管空白详细规范

Blank detail specification for unijunction transistors

35 GB/T 14078-1993 氦氖激光器技术条件

He-Ne laser specification

36 GB/T 14116-1993 彩色液晶显示器件的光度和色度的测试方法

Photomentric and colorimetric methods of measurement of color liquid


crystal displays

37 GB/T 14117-1993 彩色液晶显示器件空白详细规范 (可供认证用)

Blank detail specification of color liquid crystal displays

38 GB/T 14863-1993 用栅控和非栅控二极管的电压-电容关系测定硅外延层


中净载流子浓度的标准方法

Standard test method for net carrier density in silicon epitaxial layers by  


voltage-capacitance of gated and ungated diodes

39 GB/T 15137-1994 体效应二极管空白详细规范

Blank detail specification for gunn diodes

40 GB/T 15167-1994 半导体激光光源总规范

General specification for light source of semiconductor lasers

41 GB/T 15177-1994 微波检波、混频二极管 空白详细规范

Blank detail specification for microwave detectors and mixer diodes

42 GB/T 15178-1994 变容二极管空白详细规范

Blank detail specification for variable capacitance diodes

43 GB/T 15449-1995 管壳额定开关用场效应晶体管 空白详细规范

Blank detail-specification for field-effect transistors for case-rated  


swatching application

44 GB/T 15450-1995 硅双栅场效应晶体管 空白详细规范

Blank detail specification for silicon dual-gate field-effect transistors

45 GB/T 15529-1995 半导体发光数码管空白详细规范

Blank detail specification for LED numeric displays

46 GB/T 15649-1995 半导体激光二极管空白详细规范

Blank detail specification for semiconductor laser diodes

47 GB/T 15651-1995 半导体器件 分立器件和集成电路 第5部分:光电子器件

Semiconductor devices--Discrete devices and integrated circuits--Part 5: Optoelectronic devices

48 GB/T 15655-1995 超扭曲向列型液晶显示器件分规范

Sectional specification for super-twisted nematic liquid crystal display


devices 49 GB/T 15656-1995 超扭曲向列型液晶显示器件 空白详细规范

Blank detail specification of super-twisted nematic liquid crystal display


devices 50 GB/T 16468-1996 静电感应晶体管系列型谱

Series programmes for static induction transistors

51 GB/T 4023-1997 半导体器件分立器件和集成电路 第2部分: 整流二极管

Semiconductor devices--Discrete devices and integrated circuits--Part 2: Rectifier diodes

52 GB/T 6351-1998 半导体器件 分立器件 第2部分: 整流二极管 第一篇 100A以下


环境或管壳额定整流二极管(包括雪崩整流二极管)空白详细规范

Semiconductor devices Discrete devices Part 2: Rectifier diodes Section One-Blank detail specification for rectifier diodes(including avalanche recti-fier diodes)1, ambient and case-rated,up to 100A

53 GB/T 6352-1998 半导体器件 分立器件 第6部分: 闸流晶体管 第一篇 100A以下


环境或管壳额定反向阻断三极闸流晶体管空白详细规范 Semiconductor devices Discrete devices Part 6: Thyristors Section One-Blank detail specification for reverse blocking


triode thyristors,ambient or case-rated,up to 100A

54 GB/T 6590-1998 半导体器件 分立器件 第6部分: 闸流晶体管 第二篇 100A以下


环境或管壳额定的双向三极闸流晶体管空白详细规范 Semiconductor devices Discrete devices Part 6: Thyristors Section Two-Blank detail specification for bidirectional triode


thyristors(triacs),ambient or case-rated,up to 100A

55 GB/T 6217-1998 半导体器件 分立器件 第7部分: 双极型晶体管 第一篇 高低频放


大环境额定的双极型晶体管空白详细规范 Semiconductor Devices Discrete


devices Part  Bipolar transistors Section One-Blank detail specification


for ambient-rated bipolar transistors for low and high frequency


amplification 56 GB/T 7576-1998 半导体器件 分立器件 第7部分: 双极型晶体管


第四篇 高频放大管壳额定双极型晶体管空白详细规范 Semiconductor devices Discrete devices Part 7: Bipolar transistors Section Four-Blank detail specification for case-rated


bipolar transistors for high-frequency amplification

57 GB/T 6219-1998 半导体器件 分立器件 第8部分: 场效应晶体管 第一篇 1GHz、


5W以下的单栅场效应晶体管 空白详细规范 Semiconductor devices Discrete devices Part 8: Field-effect transistors Section One-Blank detail specification for


singe-gate field-effect transistors up to 5W and 1GHz

58 GB/T 17573-1998 半导体器件 分立器件和集成电路


第1部分: 总则 Semiconductor devices Discrete devices and integrated circuits

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